High-purity silicon wafer for research use 4 x P type (high resistance) 1 piece

We have a proven track record in research and development, and can provide wafers made of high-purity materials in small quantities. Size (inches) x Conduction type: 4 x P type (high resistance) OF length (mm) x wafer thickness (μm): 32.5±2.5×525±25 Quantity: 1 piece Manufacturing method: CZ method Surface orientation: 100 OF position: 110 Resistance value: 0.1 to 100 Ω cm *Low resistance: ≦0.02 Ω cm, High resistance: ≧500 Ω cm Particles: Any particle *This product is manufactured using crystal materials for semiconductors, but we are not able to provide certification regarding the purity of the materials. This allows for highly precise processing with smaller tolerances for orientation (cutting angle), OF position angle, and thickness, enabling accurate groove formation by etching. A wide variety of shape processing and surface treatments are possible (e.g., countersinking, drilling, and oxide-coated wafers). We can accommodate your desired resistivity and wafer thickness. Please contact us at any time regarding 8 inch and 12 inch sizes (minimum order 25 sheets).