High-purity silicon wafer for research use, 6 x P type, 1 piece

Size (inch) x Conduction Type: 6 x P-type OF length (mm) x wafer thickness (μm): 47.5±2.5 x 625±25 Manufacturing method: CZ method Surface orientation: 100 OF position: 110 Resistance value: 0.1 to 100 Ω cm Particles: Any particle Quantity: 1 piece About custom-made products ① Orientation (cutting angle), OF position angle tolerance, and thickness tolerance can be processed with higher precision and smaller tolerances, enabling accurate groove formation by etching. ②Various shapes and surface treatments are possible (e.g. rough cut products, drilled products, wafers with oxide film). 3) We can accommodate your desired resistivity and wafer thickness. ④Please contact us at any time regarding 8 inch and 12 inch sizes (minimum order is 25 sheets). *This product is manufactured using crystal materials for semiconductors, but we are not able to provide certification regarding the purity of the materials. RoHS2 (EU)2015/863 compliant [About RoHS]